Solid-state imaging device and method for producing the same

Details Solid-state imaging device and method for producing the same Solid-state imaging device and method for producing the same

2006-08-07

2008-09-02

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S078000, C257S088000, C257S093000, C257S215000, C257S222000, C257S223000, C257S226000, C257S238000, C257S242000, C257S251000, C257S291000, C257S292000, C257S294000, C257S461000, C257S462000

Reexamination Certificate

active

07420235

ABSTRACT:
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode including a first layer electrically conducting film and a second layer electrode including a second layer electrically conducting film, which are formed on a gate oxide film including a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film including a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

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