Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-12-26
2006-12-26
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S433000, C257S434000, C257S460000, C257S462000
Reexamination Certificate
active
07154156
ABSTRACT:
A solid-state imaging device includes: a base made of an insulation material and having a frame form in planar shape with an aperture formed at an inner region; a plurality of wirings provided on one surface of the base and extending toward an outer periphery of the base from a region along the aperture; and an imaging element mounted on the surface of the base with wirings provided thereon so that a light-receptive region of the imaging element faces the aperture. An end portion on the aperture side of each of the plurality of wirings forms an internal terminal portion and an end portion on the outer peripheral side of each of the plurality of wirings forms an external terminal portion, the internal terminal portion of the wiring being connected electrically with an electrode of the imaging element. The wirings are made of thin metal plate leads, the base is made up of a resin molded member in which the thin metal plate leads are embedded, and at least a part of a side edge face of the thin metal plate leads is embedded in the base. The rigidity of the base is enhanced by the thin metal plate leads, thus reducing a curl and a warp of the base.
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Minamio Masanori
Tsuji Mutsuo
Yamauchi Kouichi
Hamre Schumann Mueller & Larson P.C.
Tran Thien F.
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