Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S436000
Reexamination Certificate
active
07135725
ABSTRACT:
A solid-state imaging device of the present invention is provided with a plurality of photodiodes arranged in a one-dimensional or a two-dimensional arrangement, inorganic dielectric films that are made of a translucent inorganic substance, formed on the photodiode, and a hollow layer that is formed within the inorganic dielectric film and sandwiched between an inner lateral wall and an outer lateral wall formed with the inorganic dielectric film, wherein the hollow layer has a funnel shape whose aperture widens from an end portion near an upper portion of the photodiode with increasing distance from the photodiode. Light that is incident on a region above the photodiode area can be focused effectively onto the photodiode over a wide range.
REFERENCES:
patent: 2005/0110059 (2005-05-01), Kato
patent: 6-224398 (1994-08-01), None
patent: 2869280 (1998-12-01), None
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