Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Reexamination Certificate
2011-06-21
2011-06-21
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
C438S060000, C438S073000, C438S075000, C438S078000, C257S222000, C257S291000, C257S448000, C257SE21617, C257SE27150, C257SE27153, C257SE27154, C257SE31083, C257SE31084
Reexamination Certificate
active
07964451
ABSTRACT:
A first oxide film (102) is formed on a semiconductor substrate (101). A first nitride film (103) is formed on first gate electrode formation regions of the first oxide film (102). A plurality of first gate electrodes (104) are provided on the first nitride film (103) so as to be spaced apart from one another with a predetermined distance therebetween. A second oxide film (105) covers upper part and side walls of each of the first gate electrodes (104). A sidewall spacer (106) of a third oxide film is buried in an overhang portion generated on each side wall of each of the first gate electrodes (104) covered by the second oxide film (105). A second nitride film (107) covers the second oxide film (105), the sidewall spacer (106) and part of the first oxide film (102) located between the first gate electrodes (104). A plurality of second gate electrodes (108) are formed on at least part of the second nitride film (107) located between adjacent two of the first gate electrodes (104).
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Hirata Kazuhisa
Niisoe Naoto
Yamada Tohru
Joy Jeremy J
McDermott Will & Emery LLP
Panasonic Corporation
Smith Zandra
LandOfFree
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