Solid-state imaging device and method for fabricating the...

Details Solid-state imaging device and method for fabricating the... Solid-state imaging device and method for fabricating the...

2008-05-27

2010-11-30

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S293000, C257SE27133

Reexamination Certificate

active

07842986

ABSTRACT:
A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planarization, a plurality of signal lines disposed above the planarizing layer and a waveguide which guides incident light to each of the light-receiving sections, the waveguide passing through the space between the plurality of signal lines.

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Japanese Office Action Issued on Oct. 19, 2007.
Japanese Office Action issued on Oct. 23, 2007.
Office Action for Japanese Application No. 2002-362685 dated Aug. 7, 2009.
Japanese Patent Office, Office Action issued in Patent Application JP 2007-325614, on Aug. 24, 2010.

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