Solid state imaging device and manufacturing method thereof

Details Solid state imaging device and manufacturing method thereof Solid state imaging device and manufacturing method thereof

2011-03-08

2011-03-08

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S068000, C438S110000, C438S114000, C438S458000, C438S462000, C257SE31127

Reexamination Certificate

active

07901973

ABSTRACT:
To a transparent substrate (20) on which a plurality of spacers (5) are formed, an infrared cut filter (IRCF) substrate (27) is attached. The IRCF substrate (27) has a coefficient of thermal expansion smaller than the transparent substrate (20) and approximately equal to a wafer (31). Next, the transparent substrate (20) is diced into plural pieces to form a plurality of cover glasses (6). Then heat cure adhesive (32) is coated on each spacer (5) and the spacers (5) are attached on the wafer (31) on which a plurality of light receiving section (3) and pads (10) are previously formed. Finally, the heat cure adhesive (32) is heated to be cured.

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