Solid-state imaging device and manufacturing method thereof

Details Solid-state imaging device and manufacturing method thereof Solid-state imaging device and manufacturing method thereof

2008-05-13

2011-12-06

Chiang, Jack (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257SE21001, C257SE31001, C257SE27133, C438S069000, C438S059000, C438S080000

Reexamination Certificate

active

08072015

ABSTRACT:
A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

REFERENCES:
patent: 5920092 (1999-07-01), Watanabe
patent: 7348615 (2008-03-01), Koizumi
patent: 2009/0098679 (2009-04-01), Abe et al.
patent: 2010/0237393 (2010-09-01), Inoue
patent: 2002-270808 (2002-09-01), None
K. Itonaga et al., “A High-Performance and Low-Noise CMOS Image Sensor with an Expanding Photodiode under the Isolation Oxide”, IEDM Tech, Dig., 2005.

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