Solid-state imaging device and manufacturing method of the same

Details Solid-state imaging device and manufacturing method of the same Solid-state imaging device and manufacturing method of the same

2008-09-26

2010-10-12

Garber, Charles D (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S462000, C257S465000, C257SE31062, C438S057000

Reexamination Certificate

active

07812380

ABSTRACT:
A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first region, under an end of the gate electrode in a gate width direction.

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English Language Abstract of JP 2001-185716, Jul. 6, 2001.
English Language Abstract of JP 2006-324482, Nov. 30, 2006.
English Language Abstract of 2001-230400 A, Aug. 24, 2001.

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