Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S461000, C257S462000, C257S465000
Reexamination Certificate
active
07015521
ABSTRACT:
A solid-state imaging device is provided, which comprising at least one unit pixel portion. Each of the at least one unit pixel portion comprises a light receiving portion for subjecting incident light to photoelectric conversion to output electric charges, and an optical signal detecting portion comprising a first conductivity type buried region for accumulating the output electric charges. The light receiving portion comprises at least a portion of a second conductivity type impurity diffusion region, and at least a portion of a first conductivity type well region provided between a second conductivity type well region and the second conductivity type impurity diffusion region. The second conductivity type well region and the second conductivity type impurity diffusion region are separated from each other.
REFERENCES:
patent: 6483163 (2002-11-01), Isogai et al.
patent: 6781169 (2004-08-01), Roy
patent: 11-195778 (1999-07-01), None
Conlin David G.
Crane Sara
Edwards Angell Palmer & & Dodge LLP
Tucker David A.
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