Solid-state imaging device and camera having the same

Details Solid-state imaging device and camera having the same Solid-state imaging device and camera having the same

2011-01-04

2011-01-04

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S293000, C257S294000, C257S258000, C257S443000, C348S311000

Reexamination Certificate

active

07863661

ABSTRACT:
Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.

REFERENCES:
patent: 7016089 (2006-03-01), Yoneda et al.
patent: 2006/0043442 (2006-03-01), Yuzurihara et al.
patent: 2008/0018770 (2008-01-01), Kato
patent: 2008/0024638 (2008-01-01), Murakami
patent: 2008/0061216 (2008-03-01), Kasuga et al.
patent: 2008/0074527 (2008-03-01), Kato
patent: 2008/0079106 (2008-04-01), Miyagawa et al.
patent: 2001-230400 (2001-08-01), None
English languge Abstract of JP 2001-230400, Aug. 24, 2001.

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