Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

1999-04-20

2000-12-26

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257291, 257292, 257 59, 257 72, H01L 31062, H01L 31113, H01L 2904, H01L 31036

Patent

active

061664057

ABSTRACT:
A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.

REFERENCES:
patent: 4143389 (1979-03-01), Koike et al.
patent: 4933731 (1990-06-01), Kimura
patent: 5061978 (1991-10-01), Mizutani et al.
patent: 5101253 (1992-03-01), Mizutani et al.

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