Solid-state imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S294000

Reexamination Certificate

active

07816711

ABSTRACT:
A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

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patent: 2002/0093015 (2002-07-01), Furumiya et al.
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patent: 06-339081 (1994-12-01), None
patent: 2001-218073 (2001-08-01), None
patent: 2001-230400 (2001-08-01), None
patent: 2001-332714 (2001-11-01), None
patent: 2003-258230 (2003-09-01), None

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