Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2007-09-12

2009-06-02

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S435000, C257SE27133

Reexamination Certificate

active

07541631

ABSTRACT:
A solid-state imaging device including: a plurality of photodiode parts (1); a plurality of vertical charge transfer parts (2) each of which reads out a signal charge and transfers the signal charge in a vertical direction; and a plurality of shade films (5) that have conductivity, which supplies a transfer pulse via the shade film (5), is used. The vertical charge transfer parts (2) respectively have transfer channels (13) and transfer electrodes (3). The shade film (5) is formed above the corresponding vertical charge transfer part (2) via an insulation layer (21) that insulates the shade film (5) from the transfer electrodes (3). The insulation layer (21) has a thick part (8) in a part of the insulation layer (21) where the shade film (5) is overlapped on a side of the photodiode part (1) that is a subject to be read out by the vertical charge transfer part (2).

REFERENCES:
patent: 5796154 (1998-08-01), Sano et al.
patent: 7053427 (2006-05-01), Tanigawa
patent: 7446356 (2008-11-01), Misawa
patent: 3-256359 (1991-11-01), None

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