Solid state imaging device

Details Solid state imaging device Solid state imaging device

2007-08-21

2007-08-21

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S369000, C257S401000, C257S443000, C257S465000

Reexamination Certificate

active

11095592

ABSTRACT:
A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

REFERENCES:
patent: 6194244 (2001-02-01), Yamaguchi et al.
patent: 6344670 (2002-02-01), Yamaguchi et al.
patent: 6627476 (2003-09-01), Kawakami et al.
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 2004/0108502 (2004-06-01), Nakamura et al.
patent: 2005/0242385 (2005-11-01), Yamaguchi et al.
patent: 2003-282857 (2003-10-01), None
U.S. Appl. No. 11/387,819, filed Mar. 24, 2006, Nakamura et al.

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