Solid-state imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257SE33004

Reexamination Certificate

active

07053427

ABSTRACT:
A process for producing a solid-state imaging device which includes the steps of forming a light-receiving portion of a pixel in a surface region on the substrate, forming above the light receiving portion an inter-layer dielectric having a depression in its surface, forming on the inter-layer dielectric a light transmitting film having in its surface a concave conforming to the depression, forming at the position that covers the concave on the light transmitting film a mask layer with a convexly curved surface, and etching the mask layer and the light transmitting film all together, thereby making the light transmitting film into a shape of convex lens with an upwardly curved surface.

REFERENCES:
patent: 5593913 (1997-01-01), Aoki
patent: 5796154 (1998-08-01), Sano et al.
patent: 5976907 (1999-11-01), Shigeta et al.
patent: 11-040787 (1999-12-01), None

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