Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE33004
Reexamination Certificate
active
07053427
ABSTRACT:
A process for producing a solid-state imaging device which includes the steps of forming a light-receiving portion of a pixel in a surface region on the substrate, forming above the light receiving portion an inter-layer dielectric having a depression in its surface, forming on the inter-layer dielectric a light transmitting film having in its surface a concave conforming to the depression, forming at the position that covers the concave on the light transmitting film a mask layer with a convexly curved surface, and etching the mask layer and the light transmitting film all together, thereby making the light transmitting film into a shape of convex lens with an upwardly curved surface.
REFERENCES:
patent: 5593913 (1997-01-01), Aoki
patent: 5796154 (1998-08-01), Sano et al.
patent: 5976907 (1999-11-01), Shigeta et al.
patent: 11-040787 (1999-12-01), None
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