Solid state imaging apparatus and method for fabricating the...

Details Solid state imaging apparatus and method for fabricating the... Solid state imaging apparatus and method for fabricating the...

2006-01-20

2008-10-14

Toledo, Fernando L (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C438S057000, C438S060000

Reexamination Certificate

active

07436012

ABSTRACT:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

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patent: 2003-264281 (2003-09-01), None

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