Solid-state image transistor having a shielding film

Details Solid-state image transistor having a shielding film Solid-state image transistor having a shielding film

1996-11-22

1998-06-30

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257297, 257401, 257435, 257448, H01L 31062, H01L 31113

Patent

active

057738599

ABSTRACT:
A solid-state image device and a method of manufacturing are disclosed. The solid-state image device has: a plurality of pixels, each pixel having a transistor for converting an incident light into an electrical signal, the transistor having a semiconductor substrate, source-drain regions formed on a surface portion of the semiconductor substrate, the source-drain regions being spaced apart from each other to define a channel region between them, and a gate electrode formed above the channel region; a selection line electrically connected to the gate electrode for selecting a pixel from the plurality of pixels; an interlayer insulating film formed to cover the gate electrode and the source and drain regions; a signal line connected to one of the source-drain regions through a contact hole formed in the interlayer insulating film; and a light-shielding film formed below the interlayer insulating film to cover the source-drain region connected to the signal line.

REFERENCES:
patent: 4616401 (1986-10-01), Takeuchi
patent: 4901129 (1990-02-01), Hynecek
patent: 4949152 (1990-08-01), Asano et al.
patent: 4994893 (1991-02-01), Ozaki et al.
Koike et al., "Solid-State Imaging and Biomedical Applications", ISSCC, Feb. 1979, pp. 192-193.
IEEE Electron Device Letters, vol. 11, No. 4, Apr. 1990, New York USA, pp. 143-145, Nishizawa et al. "Spectral Response of an SIT Image Sensor with an Improved Structure".
Patents Abstracts of Japan, vol. 17, No. 145 (E1337), 24 Mar. 1993, and JP-A-04 312 082 (Sony Corp.).

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