Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-10-12
1996-03-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257233, 257249, 257448, H01L 27148, H01L 29768
Patent
active
055023193
ABSTRACT:
Metal wires for applying the clock voltage in a CCD solid state image sensor are angled with respect to the photodiodes that are arranged in a matrix. Also, a photo-blocking layer is formed over the metal wires. Accordingly, light incident on portions of the sensor other than the photodiodes is effectively prevented and noise caused due to coupling with the semiconductor substrate is minimized, thereby improving the picture quality of the solid state image sensor. Furthermore, since the metal wires directly apply the clock voltage to the CCD gates, there is no need for a polysilicon gate conductor. Thus, clock skew is prevented and phase differences between the signal image from the central part and the peripheral part of the solid stage image sensor is greatly reduced.
REFERENCES:
patent: 4539596 (1985-09-01), Elabd
patent: 4963956 (1990-10-01), Manabe et al.
patent: 5216489 (1993-06-01), Yonemoto et al.
patent: 5235198 (1993-08-01), Stevens et al.
Yonemoto et al., "A 2 Million Pixel FIT-CCD Image Sensor for HDTV Camera System", ITEJ Technical Report, vol. 15, No. 16, Feb. 1991, pp. 7-12.
Mintel William
Samsung Electronics Co,. Ltd.
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