Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S294000, C257SE33073
Reexamination Certificate
active
10494264
ABSTRACT:
A solid-state image sensor has a chip-size package, which can be easily fabricated. The element-formation regions are formed in the semiconductor substrate (21) of the light-receiving element layer (20) corresponding to the pixel regions. The semiconductor light-receiving elements (PD) are formed in the respective element-formation regions and covered with the light-transmissive insulator films (25a), (25b) and (26). The light-introducing layer (40), which includes the light-introducing cavity (42) and the quartz cap (51) for closing the cavity, is formed on the film (26). The microlenses (43) are incorporated into the cavity (42). The electric output signals of the semiconductor light-receiving elements (PD) are taken out to the bottom of the substrate (21) by way of the buried interconnections of the substrate (21) and then, derived to the outside of the image sensor by way of the output layer (10) or the interposer (10A).
REFERENCES:
patent: 5481124 (1996-01-01), Kozuka et al.
patent: 5844290 (1998-12-01), Furumiya
patent: 6069350 (2000-05-01), Ohtsuka et al.
patent: 6285064 (2001-09-01), Foster
patent: 7110034 (2006-09-01), Suda
patent: 0486318 (1992-05-01), None
patent: 0570224 (1993-11-01), None
patent: 0703619 (1996-03-01), None
patent: 06-350068 (1994-12-01), None
patent: 09-218088 (1997-08-01), None
patent: 10-209414 (1998-08-01), None
patent: 2001-196374 (2001-07-01), None
patent: WO99/45588 (1999-09-01), None
International Search Report, completed Feb. 24, 2003.
Lee, Kang Wook et al, “Development of Three-Dimensional Integration Technology for Highly Parallel Image-Processing Chip”, Jpn. J. Appl. Phys. vol. 39 pp. 2473-2477, Part I, No. 4B, Apr. 2000.
Kurino, H. et al, “Intelligent Image Sensor Chip with Three Dimensional Structure”, Dept. of Machine Intelligence and Systems Engineering, Tohoku University, 1999 IEEE, 5 pages.
Office Action issued Sep. 21, 2006 in corresponding Taiwanese Patent Application. Translation of portions encased is attached herewith.
Brewster William M.
Griffin & Szipl, P.C.
ZyCube Co., Ltd.
LandOfFree
Solid-state image sensor including a microlens does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid-state image sensor including a microlens, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state image sensor including a microlens will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3773688