Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-01
2008-11-18
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S437000
Reexamination Certificate
active
07453109
ABSTRACT:
At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
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Hashimoto Sakae
Itano Tetsuya
Koizumi Toru
Mishima Ryuichi
Okita Akira
Canon Kabushiki Kaisha
Canon USA Inc IP Division
Prenty Mark
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