Solid state image sensor

Details Solid state image sensor Solid state image sensor

2008-08-04

2010-06-08

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S225000, C257S226000, C257S242000, C257S258000, C257S292000, C257SE27150

Reexamination Certificate

active

07732843

ABSTRACT:
Forming an impurity region6and an impurity region5having a lower concentration than the impurity region6in a lower layer region of a gate electrode close to the boundary with a signal electron-voltage conversion section of a horizontal CCD outlet makes it possible to smooth a potential distribution at the time of transfer, improve the transfer efficiency, increase the number of saturated electrons and reduce variations in the transfer efficiency and variations in saturation.

REFERENCES:
patent: 6426238 (2002-07-01), Morimoto
patent: 6833870 (2004-12-01), Nishi
patent: 7244971 (2007-07-01), Sakamoto et al.

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