Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-12-09
2008-12-30
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S189000, C257S446000, C257SE27133
Reexamination Certificate
active
07470944
ABSTRACT:
A solid-state image sensor of the present invention has a plurality of pixel cells that generate signal charges in accordance with incident light. It is characterized by having a gettering region within the area of a pixel cell. The gettering region, which is disposed closely to the photoelectrical conversion layer, makes direct and efficient use of gettering capability in the pixel region in the solid-state image sensor. As a result, it is possible to effectively eliminate metal contaminant contained in the pixel region, thereby remarkably reducing dark outputs occurring from the metal contaminant.
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LSI Handbook; Japanese Institute of Electronics; Information and Communication Engineers; 1stEdition; pp. 358-364.
Ishida Tomohisa
Kamashita Atsushi
Suzuki Satoshi
Dickey Thomas L
Erdem Fazli
Nikon Corporation
Oliff & Berridg,e PLC
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