Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S458000, C257S069000
Reexamination Certificate
active
07005690
ABSTRACT:
The solid-state image sensor includes a pixel part10, an analog circuit part12, a digital circuit part14and an input/output circuit part16. The digital circuit part14includes a first well42cof a second conduction type formed in a second region of a semiconductor substrate20of a first conduction type surrounding a first region thereof; a first buried diffused layer40cof the second conduction type buried in the first region: a second well44bof the first conduction type formed near a surface of the semiconductor substrate20in the first region; and a first transistor38eformed on the second well44b.
REFERENCES:
patent: 6169318 (2001-01-01), McGrath
patent: 2 335 097 (1999-09-01), None
patent: 5-115047 (1993-05-01), None
patent: 5-129572 (1993-05-01), None
patent: 11-317667 (1999-11-01), None
patent: 2002-199289 (2002-07-01), None
patent: 2002-329854 (2002-11-01), None
patent: 2002-334974 (2002-11-01), None
Chijiiwa Masahiro
Katayama Masaya
Takeda Shigetoshi
Fujitsu Limited
Ho Tu-Tu
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Solid-state image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid-state image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state image sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3683213