Solid-state image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S291000, C257S458000, C257S069000

Reexamination Certificate

active

07005690

ABSTRACT:
The solid-state image sensor includes a pixel part10, an analog circuit part12, a digital circuit part14and an input/output circuit part16. The digital circuit part14includes a first well42cof a second conduction type formed in a second region of a semiconductor substrate20of a first conduction type surrounding a first region thereof; a first buried diffused layer40cof the second conduction type buried in the first region: a second well44bof the first conduction type formed near a surface of the semiconductor substrate20in the first region; and a first transistor38eformed on the second well44b.

REFERENCES:
patent: 6169318 (2001-01-01), McGrath
patent: 2 335 097 (1999-09-01), None
patent: 5-115047 (1993-05-01), None
patent: 5-129572 (1993-05-01), None
patent: 11-317667 (1999-11-01), None
patent: 2002-199289 (2002-07-01), None
patent: 2002-329854 (2002-11-01), None
patent: 2002-334974 (2002-11-01), None

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