Solid state image sensor

Details Solid state image sensor Solid state image sensor

1999-03-19

2000-06-06

Ngo, Nagan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257443, 257463, H01L 31062, H01L 31113

Patent

active

060722061

ABSTRACT:
The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.

REFERENCES:
patent: 5904493 (1999-05-01), Lee et al.
patent: 6023293 (2000-02-01), Watanabe et al.

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