Solid-state image sensing device equipped with inner lens

Details Solid-state image sensing device equipped with inner lens Solid-state image sensing device equipped with inner lens

2008-06-03

2008-06-03

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257S462000, C257SE31122

Reexamination Certificate

active

07382011

ABSTRACT:
A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.

REFERENCES:
patent: 2005/0110002 (2005-05-01), Noda
patent: 2006/0038209 (2006-02-01), Hashimoto
patent: 2007/0115377 (2007-05-01), Noda et al.
patent: 2005-012189 (2005-01-01), None

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