Solid-state image sensing device and method of fabricating a...

Details Solid-state image sensing device and method of fabricating a... Solid-state image sensing device and method of fabricating a...

2007-01-02

2007-01-02

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S057000

Reexamination Certificate

active

10973987

ABSTRACT:
A solid-state image sensing device is provided. In the device, a first floating p-type well and a second floating p-type well are disposed so as to overlap each other and are respectively provided in a light-receiving area and the area of a field effect transistor for light signal detection. A circular gate electrode is disposed so as to cover the overlapping section of the first floating p-type well with the second floating p-type well and is formed on an n-type channel doped layer.

REFERENCES:
patent: 6504194 (2003-01-01), Miida
patent: 08-130300 (1996-05-01), None
patent: 2001-177085 (2001-06-01), None
Communication from Japanese Patent Office regarding counterpart application, May 9, 2006.

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