Solid-state image sensing device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S239000, C257S291000, C257S294000, C257SE27130, C257SE27132, C257SE27133, C257SE27151

Reexamination Certificate

active

07456453

ABSTRACT:
A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.

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European Search Report, dated Mar. 20, 2007 for European Application No. 06115090.0-1235.

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