Solid-state image sensing device

Details Solid-state image sensing device Solid-state image sensing device

2008-05-13

2008-05-13

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S440000, C257SE27135

Reexamination Certificate

active

07372089

ABSTRACT:
A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.

REFERENCES:
patent: 5619049 (1997-04-01), Kim
patent: 5739851 (1998-04-01), Ohsawa et al.
patent: 6521920 (2003-02-01), Abe
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 6765246 (2004-07-01), Inagaki
patent: 7075164 (2006-07-01), Uya
patent: 2002-83946 (2002-03-01), None

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