Solid-state image sensing apparatus and fabrication method...

Details Solid-state image sensing apparatus and fabrication method... Solid-state image sensing apparatus and fabrication method...

2007-01-09

2010-06-29

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S461000, C257S462000

Reexamination Certificate

active

07745859

ABSTRACT:
A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a substrate, a surface shield layer of the first conductivity type provided in a surface portion of the substrate which is located above the signal storage portion, a gate electrode provided over the substrate in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the substrate which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the substrate which is located under the gate electrode in adjacent relation to one end of the surface shield layer.

REFERENCES:
patent: 6504193 (2003-01-01), Ishiwata et al.
patent: 6610557 (2003-08-01), Lee et al.
patent: 2006/0157756 (2006-07-01), Tanaka et al.
patent: 2007/0141797 (2007-06-01), Li
patent: 2000-150847 (2000-05-01), None
Merriam-Webster's Collegiate Dictionary, Tenth Edition; 1998; Merriam-Webster, Inc.; pp. 105, 1287.

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