Solid-state image pickup device and manufacturing method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S059000, C257S072000, C257S292000, C257S293000, C257S294000, C257S461000, C257S462000, C257S463000, C257S464000, C257S465000

Reexamination Certificate

active

07382007

ABSTRACT:
A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

REFERENCES:
patent: 5466612 (1995-11-01), Fuse et al.
patent: 5744831 (1998-04-01), Tanaka
patent: 5844290 (1998-12-01), Furumiya
patent: 5959318 (1999-09-01), Shim et al.
patent: 6614479 (2003-09-01), Fukusho et al.
patent: 6891243 (2005-05-01), Adachi et al.

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