Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-11
2008-09-23
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S432000, C257SE31127
Reexamination Certificate
active
07427789
ABSTRACT:
A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate4, a process for forming an interconnection portion, having an interconnection layer8in an insulating layer7, on the surface side of the semiconductor substrate4, a process for forming an adhesive layer, made of a material cured at a temperature lower than a deterioration starting temperature of the interconnection layer8, on the surface of the interconnection portion and bonding a supporting substrate30to the surface side of the interconnection portion through the adhesive layer9by heat treatment at a temperature lower than the deterioration starting temperature of the interconnection layer8and a process for decreasing a thickness of the semiconductor substrate4from the back side. A solid-state image pickup device manufacturing method can bond the supporting substrate30to the surface side of the interconnection portion through the adhesive layer9without exerting a thermal influence upon the interconnection layer8that was previously formed on the surface side of the semiconductor substrate4.
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Kananen Ronald P.
Ngo Ngan
Rader & Fishman & Grauer, PLLC
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