Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000
Reexamination Certificate
active
11065758
ABSTRACT:
An imaging area is provided on a surface of a semiconductor substrate, and light-receiving portions and transfer channels are provided in the imaging area. A group of transfer electrodes extends in a direction crossing the transfer channels on the imaging area. A group of transfer signal lines, which are provided for every transfer signal of each phase along the periphery of the imaging area on the semiconductor substrate, is included. A transfer signal line connected to a transfer electrode having a large surface area on the transfer channel, of the group of the transfer electrodes, has an electrical resistance smaller than that of a transfer signal line connected to a transfer electrode having a small surface area on the transfer channel in the group of the transfer electrodes.
REFERENCES:
patent: 2002-076319 (2002-03-01), None
Conlin David G.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Pham Long
Sharp Kabushiki Kaisha
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