Solid-state image pickup device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S290000

Reexamination Certificate

active

11065758

ABSTRACT:
An imaging area is provided on a surface of a semiconductor substrate, and light-receiving portions and transfer channels are provided in the imaging area. A group of transfer electrodes extends in a direction crossing the transfer channels on the imaging area. A group of transfer signal lines, which are provided for every transfer signal of each phase along the periphery of the imaging area on the semiconductor substrate, is included. A transfer signal line connected to a transfer electrode having a large surface area on the transfer channel, of the group of the transfer electrodes, has an electrical resistance smaller than that of a transfer signal line connected to a transfer electrode having a small surface area on the transfer channel in the group of the transfer electrodes.

REFERENCES:
patent: 2002-076319 (2002-03-01), None

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