Solid-state image pickup apparatus

Details Solid-state image pickup apparatus Solid-state image pickup apparatus

2007-06-05

2007-06-05

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S233000, C257SE31097, C257SE27131, C257SE27132, C257SE27133

Reexamination Certificate

active

11190964

ABSTRACT:
The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

REFERENCES:
patent: 5291044 (1994-03-01), Gaboury et al.
patent: 6407418 (2002-06-01), Haga et al.
patent: 6583456 (2003-06-01), Haga et al.
patent: 7170042 (2007-01-01), Kobayashi et al.
patent: 2005/0056869 (2005-03-01), Ichige et al.
patent: 2005/0205902 (2005-09-01), Hara et al.
patent: 2005/0269604 (2005-12-01), Koizumi
patent: 2003-258229 (2003-09-01), None

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