Solid-state image device

Details Solid-state image device Solid-state image device

2005-03-30

2008-12-02

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S913000, C257S446000, C257SE27139, C438S058000

Reexamination Certificate

active

07459735

ABSTRACT:
A solid-state imaging device capable of reducing the occurrence of a dark current and a pixel defect is provided.A solid-state imaging device10is formed in which a plurality of photoelectric conversion elements4are formed in a semiconductor substrate1; circuits5which read out signal charge from each of the plurality of photoelectric conversion elements4are respectively formed on the semiconductor substrate1; light is applied from the opposite side to the circuits5which read out signal charge from each of the plurality of photoelectric conversion elements; and a gettering region is provided in an element-isolation area2which separate the photoelectric conversion elements4adjacent to each other.

REFERENCES:
patent: 5670817 (1997-09-01), Robinson
patent: 7132702 (2006-11-01), Narui et al.
patent: 2005/0104100 (2005-05-01), Ishida et al.
patent: 2008/0083940 (2008-04-01), Ezaki et al.

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