Solid state formation of sapphire using a localized energy sourc

Details Solid state formation of sapphire using a localized energy sourc Solid state formation of sapphire using a localized energy sourc

1993-05-21

1995-06-27

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

117 3, 117904, C30B 1322

Patent

active

054270510

ABSTRACT:
Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800.degree. C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.

REFERENCES:
patent: 988230 (1911-03-01), Verneuil
patent: 3026210 (1962-03-01), Coble
patent: 3382047 (1968-05-01), Holtzberg et al.
patent: 3564328 (1971-02-01), Bagley et al.
patent: 3591348 (1971-07-01), Belle, Jr.
patent: 3943324 (1976-03-01), Haggerty
patent: 3944640 (1976-03-01), Haggerty et al.
patent: 3998686 (1976-12-01), Meiling et al.
patent: 4058699 (1977-11-01), van Vloten
patent: 4150317 (1979-04-01), Laska et al.
patent: 4248369 (1981-02-01), Chausen
patent: 4285732 (1981-08-01), Charles et al.
patent: 4437109 (1984-03-01), Anthony et al.
patent: 4444615 (1984-04-01), Matsuzawa et al.
patent: 4519870 (1985-05-01), Matsuzawa et al.
patent: 4900393 (1990-02-01), Kugimiya et al.
patent: 4980236 (1990-12-01), Oomen et al.
patent: 5200370 (1993-04-01), Lennox et al.
"Structural and Electron Diffraction Data for Sapphire (.alpha.Al.sub.2 O.sub.3)"; Lee et al; J. of Electron Microsopy Technique; pp. 247-258 (1985).
"Structure and Properties of MgO and Al.sub.2 O.sub.2 Ceramics"; R. D. Bagley et al; in Advances in Ceramics, vol. 10; The American Ceramic Society, Inc. (1983/1984 proceedings).

Affiliated with

Also associated with

Rating

Solid state formation of sapphire using a localized energy sourc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state formation of sapphire using a localized energy sourc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state formation of sapphire using a localized energy sourc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-281073