Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Reexamination Certificate
2007-09-12
2011-11-29
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
C257S086000, C257SE21138, C257SE21475
Reexamination Certificate
active
08067303
ABSTRACT:
A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.
REFERENCES:
patent: 3214315 (1965-10-01), Hildebrand
patent: 3396401 (1968-08-01), Nonomura
patent: 3419321 (1968-12-01), Barber et al.
patent: 3605469 (1971-09-01), Queralto
patent: 3788120 (1974-01-01), Takeo et al.
patent: 3854123 (1974-12-01), Banach
patent: 3865564 (1975-02-01), Jaeger et al.
patent: 3874240 (1975-04-01), Rembaum
patent: 3943324 (1976-03-01), Haggerty
patent: 3944640 (1976-03-01), Haggerty et al.
patent: 3945318 (1976-03-01), Landsman
patent: 3965328 (1976-06-01), Locke
patent: 3981705 (1976-09-01), Jaeger et al.
patent: 4043170 (1977-08-01), Erodi et al.
patent: 4135902 (1979-01-01), Oehrle
patent: 4142088 (1979-02-01), Hirsch
patent: 4159414 (1979-06-01), Suh et al.
patent: 4215263 (1980-07-01), Grey et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4339285 (1982-07-01), Pankove
patent: 4372989 (1983-02-01), Menzel
patent: 4383843 (1983-05-01), Iyengar
patent: 4496607 (1985-01-01), Mathias
patent: 4539251 (1985-09-01), Sugisawa et al.
patent: 4547650 (1985-10-01), Arditty et al.
patent: 4565712 (1986-01-01), Noguchi et al.
patent: 4620264 (1986-10-01), Ushifusa et al.
patent: 4624934 (1986-11-01), Kokubu et al.
patent: 4663826 (1987-05-01), Baeuerle
patent: 4691091 (1987-09-01), Lyons et al.
patent: 4710253 (1987-12-01), Soszek
patent: 4761339 (1988-08-01), Komatsu et al.
patent: 4791239 (1988-12-01), Sirahata et al.
patent: 4840853 (1989-06-01), Lio et al.
patent: 4847138 (1989-07-01), Boylan et al.
patent: 4860442 (1989-08-01), Alnsworth et al.
patent: 4872923 (1989-10-01), Borodin
patent: 4880770 (1989-11-01), Mir et al.
patent: 4901550 (1990-02-01), Koide
patent: 4912087 (1990-03-01), Aslam et al.
patent: 4924033 (1990-05-01), Iyogi et al.
patent: 4950558 (1990-08-01), Sarin
patent: 4962085 (1990-10-01), deBarbadillo, II et al.
patent: 4988564 (1991-01-01), D'Angelo et al.
patent: 5015618 (1991-05-01), Levinson
patent: 5055967 (1991-10-01), Sukonnik et al.
patent: 5127364 (1992-07-01), Savkar et al.
patent: 5145741 (1992-09-01), Quick
patent: 5149681 (1992-09-01), Ohkawa et al.
patent: 5180440 (1993-01-01), Siegel et al.
patent: 5336360 (1994-08-01), Nordine
patent: 5391841 (1995-02-01), Quick
patent: 5405481 (1995-04-01), Licoppe et al.
patent: 5459098 (1995-10-01), Maya
patent: 5493096 (1996-02-01), Koh
patent: 5549971 (1996-08-01), Nordine
patent: 5629532 (1997-05-01), Myrick
patent: 5680200 (1997-10-01), Sugaya et al.
patent: 5695828 (1997-12-01), Ghosh et al.
patent: 5733609 (1998-03-01), Wang
patent: 5754299 (1998-05-01), Sugaya et al.
patent: 5793042 (1998-08-01), Quick
patent: 5823039 (1998-10-01), Umeda et al.
patent: 5837607 (1998-11-01), Quick
patent: 5847418 (1998-12-01), Nakamura et al.
patent: 5889234 (1999-03-01), Ghosh et al.
patent: 5906708 (1999-05-01), Robinson et al.
patent: 5961877 (1999-10-01), Robinson et al.
patent: 6025609 (2000-02-01), Quick
patent: 6054375 (2000-04-01), Quick
patent: 6064081 (2000-05-01), Robinson et al.
patent: 6203861 (2001-03-01), Kar et al.
patent: 6221154 (2001-04-01), Lee et al.
patent: 6252197 (2001-06-01), Hoekstra et al.
patent: 6255671 (2001-07-01), Bojarczuk et al.
patent: 6271576 (2001-08-01), Quick
patent: 6274234 (2001-08-01), Dujardin et al.
patent: 6313015 (2001-11-01), Lee et al.
patent: 6334939 (2002-01-01), Zhou et al.
patent: 6407443 (2002-06-01), Chen et al.
patent: 6526327 (2003-02-01), Kar et al.
patent: 6621448 (2003-09-01), Lasky et al.
patent: 6670693 (2003-12-01), Quick
patent: 6732562 (2004-05-01), Quick et al.
patent: 6930009 (2005-08-01), Quick
patent: 6939748 (2005-09-01), Quick
patent: 7237422 (2007-07-01), Quick
patent: 7268063 (2007-09-01), Quick
patent: 7419887 (2008-09-01), Quick
patent: 2001/0005036 (2001-06-01), Porst et al.
patent: 2002/0014631 (2002-02-01), Iwata et al.
patent: 2005/0089680 (2005-04-01), Ando et al.
patent: 358095830 (1983-06-01), None
patent: 405024975 (1993-02-01), None
patent: WO 03013757 (2003-02-01), None
Salama et al., Laser Direct Write for Wide-band gap Semiconductor Fabrication: Doping, (Compound Semiconductors, 2003 International Symposium, pp. 102-103, Aug. 25-27, 2003).
Nathaniel R. Quick, Laser Conversion of Ceramic Materials to Electroconductors, International Conference on Electronic Materials-1990, Materials Research Society, Newark, New Jersey, Sep. 17-19, 1990.
Nathaniel R. Quick, Direct Conversion of Conductors on Ceramic Substrates, International Society for Hybrid Microelectronics, ISHM 90 Proceedings 1990.
Nathaniel R. Quick and Jeffrey A. Phillips, Laser Processes for Integrating Substrate Fabrication, Proceedings of the International Conference on Lasers '91, The Society for Optical & Quantum Electronics, pp. 537-544 San Diego, CA Dec. 9-13, 1991.
Nathaniel R. Quick and Richard J. Matson, Characterization of a Ceramic Electrical Conductor Synthesized by a Laser Conversion Process, Proceedings of the International Conference on Lasers '91, The Society for Optical & Quantum Electronics, pp. 545-552 San Diego, CA Dec. 9-13, 1991.
Nathaniel R. Quick, Characterization of a Ceramic Sensor Synthesized by a Laser Conversion Process, Proceedings of the International Conference on Lasers '92. The Society for Optical & Quantum Electronics, pp. 881-887 Houston, Texas Dec. 7-10, 1992.
Nathaniel R. Quick, Characterization of a Ceramic Thermal Sensor Synthesized by a Laser Conversion Process, ICALEO '92 (International Congress on Applications of Lasers and Electro-Optics), vol. 76 Laser Materials Processing, Laser Institute of America, pp. 394-404 Oct. 25-29,1992.
D. K. Sengupta, N. R. Quick and A. Kar, Laser Direct Write of Conducting and Insulating Tracks in Silicon Carbide, Materials Research Society Symposium Proceedings vol. 624 pp. 127-133 2000.
D. K. Sengupta, N. R. Quick and A. Kar, Laser Conversion of Electrical Properties for Silicon Carbide Device Applications, Journal of Laser Applications., 2001, vol. 13, pp. 26-31.
I.A. Salama, N.R. Quick and A. Kar, Laser Doping of Silicon Carbide Substrates, Journal of Electronic Materials, vol. 31, 2002, pp. 200-208.
I.A. Salama, N. R. Quick and A. Kar, Microstructurel and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials, Journal of Materials Science, vol. 40, 2005, pp. 3969-3980.
I.A. Salama, N. R. Quick and A. Kar, Laser Synthesis of Carbon-Rich SiC Nanoribbons, Journal of Applied Physics, vol. 93, 2003, pp. 9275-9281.
I.A. Salama, N. R. Quick, and A. Kar, Laser Direct Write Doping of Wide-Bandgap Semiconductor Materials,IEEE ISCS 2003 Proceedings.
A. Salama, C. F. Middleton, N. R. Quick G. D. Boreman and A. Kar, Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequency Mixing, Symposium N1 Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics IV, 204th Meeting of the Electrochemical Society, Orlando, Florida Oct. 12-16, 2003.
A. Salama, N. R. Quick and A. Kar, Laser Direct Metallization of Silicon Carbide without Metal Deposition, Symposium C, New Applications for Wide Bandgap Semiconducto
Kar Aravinda
Quick Nathaniel R.
Dickey Thomas L
Frijouf Rust & Pyle P.A.
Partial Assignment University of Central Florida
Yushin Nikolay
LandOfFree
Solid state energy conversion device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid state energy conversion device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state energy conversion device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4285349