Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-01-31
2006-01-31
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S048000, C438S057000
Reexamination Certificate
active
06991958
ABSTRACT:
A solid state electric device includes templated charge-carrier-transporting channel layer interposed between a pair of conductive substrates. The templated charge-carrier-transporting channel layer includes a layer of a first charge-carrier-transporting material having one or more regions defined using templating techniques, in which a second charge-carrier-transporting material is deposited. The second charge-carrier-transporting material is distributed within the templated charge-carrier-transporting channel layer such that, predominantly, only a single contiguous part of the second charge-carrier-transporting material is interposed between the first conductive substrate and the second conductive substrate along any imaginary normal axis extending between the two conductive substrates.
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Frey et al. “Ultraflat Nanoshpere Lithography: A New Method to Fabricate Flat Nanostructures” Oct. 16, 2000, Adavanced Materials, vol. 20, No. 20, pp1515-9.
Baker & Botts L.L.P.
Smith Bradley K.
The Trustees of Columbia University in the City of New York
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