Solid state devices formed by differential plasma etching of res

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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156643, 1566591, 477 96, 430311, 430321, 430967, H05K 300, G03C 500

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042321107

ABSTRACT:
A process of dry etching to form negative resist patterns is described. A host polymer is mixed with one or more monomers capable of being locked into place by electromagnetic radiation and is deposited as a film on a substrate. The film is then selectively irradiated, and then fixed by heating, or vacuum, or both, and etched by means of an oxygen plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. The desirable properties of monomer and host polymer materials are discussed, and specific compositions given of aromatic monomers, silicon containing monomers, and chlorinated polymers.

REFERENCES:
patent: 3809732 (1974-05-01), Chandross et al.
patent: 3816196 (1974-06-01), La Combe
patent: 3816198 (1974-06-01), La Combe et al.
patent: 3916035 (1975-10-01), Brewer
patent: 3953620 (1976-04-01), Chandross et al.
"Photolocking-A New Technique for Fabricating Optical Waveguide Circuits," E. A. Chandross et al., Applied Physics Letters, vol. 24, No. 2, Jan. 15, 1974, pp. 72-74.
"Optical Directional Couplers and Grating Couplers Using a New High-Resolution Photolocking Material," W. J. Tomlinson et al., Applied Physics Letters, vol. 26, No. 6, Mar. 15, 1975, pp. 303-306.
"Adhesion and Release Layer for Resist Structures," E. C. Fredericks, IBM Technical Disclosure Bulletin, vol. 20, No. 3, Aug. 1977, p. 992.

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