Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2011-08-16
2011-08-16
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S100000, C257S433000, C257SE23118, C257SE31117, C257SE33059
Reexamination Certificate
active
07999398
ABSTRACT:
A solid state device has a solid state component, a power receiving/supplying portion that mounts the solid state component thereon for receiving/supplying electrical power from/to the solid state component, and a glass sealing portion that seals the solid state component. The glass sealing portion is formed of a B2O3—SiO2—Li2O—Na2O—ZnO—Nb2O5based glass, which is composed of 21 wt % to 23 wt % of B2O3, 11 wt % to 13 wt % of SiO2, 1 wt % to 1.5 wt % of Li2O, and 2 wt % to 2.5 wt % of Na2O.
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Aida Kazuya
Ohtsuka Masaaki
Sawanobori Naruhito
Suehiro Yoshinobu
Tasumi Koji
Lulis Michael
McGinn IP Law Group PLLC
Phung Anh
Sumita Optical Glass Inc.
Toyoda Gosei Co,., Ltd.
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