Solid state device

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant

Reexamination Certificate

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Details

C257S100000, C257S433000, C257SE23118, C257SE31117, C257SE33059

Reexamination Certificate

active

07999398

ABSTRACT:
A solid state device has a solid state component, a power receiving/supplying portion that mounts the solid state component thereon for receiving/supplying electrical power from/to the solid state component, and a glass sealing portion that seals the solid state component. The glass sealing portion is formed of a B2O3—SiO2—Li2O—Na2O—ZnO—Nb2O5based glass, which is composed of 21 wt % to 23 wt % of B2O3, 11 wt % to 13 wt % of SiO2, 1 wt % to 1.5 wt % of Li2O, and 2 wt % to 2.5 wt % of Na2O.

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patent: 7208430 (2007-04-01), Hasegawa et al.
patent: 7667223 (2010-02-01), Suehiro et al.
patent: 7692259 (2010-04-01), Suehiro
patent: 2003/0158030 (2003-08-01), Yamamoto et al.
patent: 2003/0228471 (2003-12-01), Hayakawa et al.
patent: 2004/0018931 (2004-01-01), Sridharan et al.
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patent: 2009/0115335 (2009-05-01), Hasegawa et al.
patent: 2009/0131240 (2009-05-01), Shimizu
patent: 2009/0143214 (2009-06-01), Niida et al.
patent: 2009/0176641 (2009-07-01), Kobayashi et al.
patent: 8-102553 (1996-04-01), None
patent: 11-177129 (1999-07-01), None
patent: 2006-108621 (2006-04-01), None

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