Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1993-11-12
1995-03-21
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117 7, 117 9, 117 10, 117952, C30B 110
Patent
active
053986393
ABSTRACT:
Films of hexagonal boron nitride are converted to a highly desirable cubic-like phase of boron nitride. The transformation is achieved by annealing the hBN material at temperatures below 1000.degree. C. The conversion may be conducted in a hydrogen, nitrogen, ammonia, vacuum, or inert gas containing atmosphere.
REFERENCES:
patent: 4188194 (1980-02-01), Corrigan
patent: 4289503 (1981-09-01), Corrigan
patent: 4545968 (1985-10-01), Hirano et al.
Vel et al, "Cubic Boron Nitride: Synthesis, Physicochemical Properties and Applications", Materials Science and Engineering, Big (1991) pp. 149-164.
Doll Gary L.
Heremans Joseph P.
Brooks Cary W.
General Motors Corporation
Kunemund Robert
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