Solid state charge qubit device

Details Solid state charge qubit device Solid state charge qubit device

2003-08-20

2010-06-08

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S009000, C257S024000, C257S288000, C257SE29168, C257SE45005, C257SE49003, C977S933000

Reexamination Certificate

active

07732804

ABSTRACT:
Ionisation of one of a pair of dopant atoms in a substrate creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes within this potential. The dopant atoms may comprise phosphorous atoms, located in a silicon substrate. A solid state quantum computer may be formed using a plurality of pairs of dopant atoms, corresponding gate electrodes, and read-out devices comprising single electron transistors.

REFERENCES:
patent: 6369404 (2002-04-01), Kane
patent: 2000-068495 (2000-03-01), None
Dzurak A.S. et al., “Charge-based silicon quantum computer architectures using controlled single-ion implantation”, cond-mat/0306265, Jun. 11, 2003 (online) (retrieved on Oct. 16, 2003). Retrieved from the internet: <URL: http:/lanl.gov/abs/cond-mat/0306265. Whole document.

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