Solid-state antenna switch and field-effect transistor

Details Solid-state antenna switch and field-effect transistor Solid-state antenna switch and field-effect transistor

1997-01-30

1999-02-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257262, 257 67, 257 47, 257409, 257401, 257339, 327581, 327437, 327389, H01Q 100, H01Q 300, H04B 140

Patent

active

058723692

ABSTRACT:
A field-effect transistor has a covering electrode overlying at least part of the transistor's channel. The covering electrode is formed on an insulating layer that covers the source, gate, and drain of the transistor. One voltage is applied to the covering electrode when the field-effect transistor is switched on. Another voltage is applied when the field-effect transistor is switched off, creating an electric field that hinders current flow in the channel. In an antenna switch, this type of transistor couples an antenna to a receiving circuit, and another transistor couples the antenna to a transmitting circuit.

REFERENCES:
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patent: 4894114 (1990-01-01), Nathanson et al.
patent: 4947232 (1990-08-01), Ashida et al.
patent: 5308999 (1994-05-01), Gotou
patent: 5428238 (1995-06-01), Hayashi et al.
patent: 5585288 (1996-12-01), Davis et al.
patent: 5693961 (1997-12-01), Hamada
patent: 5705940 (1998-01-01), Newman et al.
"High Power DPDT Antenna Switch MMIC for Digital Cellular Systems", Kohama et al, GaAs IC Symposium Digest, IEEE, 1995, pp. 75-79.

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