Solid-stage image pickup device and method for producing the...

Details Solid-stage image pickup device and method for producing the... Solid-stage image pickup device and method for producing the...

2008-04-01

2008-04-01

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S046000, C438S048000, C438S080000, C438S149000, C257SE31058

Reexamination Certificate

active

11604490

ABSTRACT:
A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

REFERENCES:
patent: 5858812 (1999-01-01), Furumiya
patent: 7119387 (2006-10-01), Ohkawa
patent: 7157754 (2007-01-01), Nagasaki et al.
patent: 2002-231929 (2002-08-01), None

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