Solid picture element manufacturing method

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S145000, C438S060000

Reexamination Certificate

active

09925905

ABSTRACT:
A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are disclosed. The solid picture element includes a buried photodiode and a transistor in communication with a transfer gate that is a selective transfer path for charges from the photodiode to the transistor. The charge accumulation region is located so that it is not in contact with the upper surface of the semiconductor substrate and so that a margin of the charge accumulation region is located 0.0 to 0.2 μm closer to the transistor than any portion of the depletion prevention region. Methods of manufacture of the picture element of the present invention include using the transfer gate as a mask and implanting ions into a semiconductor substrate at a first angle to form the charge accumulation region and at a second, steeper, angle to form the depletion prevention region. Alternative methods of manufacture include sifting a portion of a mask to sift end margins of the charge accumulation region and the depletion prevention region to achieve the desired geometry.

REFERENCES:
patent: 5276341 (1994-01-01), Lee
patent: 5476808 (1995-12-01), Kusaka et al.
patent: 5563429 (1996-10-01), Isogai
patent: 5567632 (1996-10-01), Nakashiba et al.
patent: 5637893 (1997-06-01), Furumiya
patent: 5641700 (1997-06-01), Hawkins et al.
patent: 5734293 (1998-03-01), Gross
patent: 5858812 (1999-01-01), Furumiya
patent: 5872371 (1999-02-01), Guidash et al.
patent: 5903021 (1999-05-01), Lee et al.
patent: 5904493 (1999-05-01), Lee et al.
patent: 5942774 (1999-08-01), Isogai et al.
patent: 5949061 (1999-09-01), Guidash et al.
patent: 6127697 (2000-10-01), Guidash
patent: 03171676 (1991-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Solid picture element manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid picture element manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid picture element manufacturing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3746629

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.