Solid phase epitaxial crystallization of amorphous silicon films

Details Solid phase epitaxial crystallization of amorphous silicon films Solid phase epitaxial crystallization of amorphous silicon films

1995-12-26

1998-01-13

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of quartz or glass

428428, 428446, 428448, 428700, 428701, 428702, B32B 1706

Patent

active

057077444

ABSTRACT:
A new polycrystalline silicon film which has been crystallized using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to "seed" crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.

REFERENCES:
patent: 4795679 (1989-01-01), Ramech
patent: 5108843 (1992-04-01), Ohtaka
patent: 5186785 (1993-02-01), Annamalai

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