Solid material gasification method, thin film formation...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C118S715000

Reexamination Certificate

active

07045473

ABSTRACT:
Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.

REFERENCES:
patent: 5186120 (1993-02-01), Ohnishi et al.
patent: 6243508 (2001-06-01), Jewell et al.
patent: 6581649 (2003-06-01), Jursich
patent: 2002/0023588 (2002-02-01), Yamamuka et al.
patent: 2002/0043215 (2002-04-01), Yoshioka et al.
patent: 2003/0129306 (2003-07-01), Wade et al.
patent: 2004/0144399 (2004-07-01), McDermott et al.
patent: 5-311446 (1993-11-01), None
patent: 7-76778 (1995-03-01), None
patent: 10-298762 (1998-11-01), None

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