Solid image pick-up element with a single layer electrode...

Details Solid image pick-up element with a single layer electrode... Solid image pick-up element with a single layer electrode...

2005-06-30

2009-10-27

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S222000, C257S225000, C257S233000, C257S240000, C257S245000, C257S258000, C257S232000, C257S226000, C257S292000, C257S293000, C257SE27150, C257SE27132

Reexamination Certificate

active

07608871

ABSTRACT:
A solid image pick-up element comprises: a photoelectric converting portion; a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion; and a peripheral circuit portion connected to the charge transmitting portion, wherein a surface level of a field oxide film provided at the peripheral circuit portion and the charge transmitting portion to surround an effective image pick-up region of the photoelectric converting portion is to a degree the same as a surface level of the photoelectric converting portion.

REFERENCES:
patent: 5241198 (1993-08-01), Okada et al.
patent: 6518605 (2003-02-01), Hatano et al.
patent: 0 492 144 (1992-07-01), None
patent: 5-182992 (1993-07-01), None
patent: 11-26743 (1999-01-01), None
patent: 2003-332554 (2003-11-01), None
patent: 2004-55669 (2004-02-01), None
patent: WO-2005/114735 (2005-12-01), None

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