Coating apparatus – Gas or vapor deposition – Chamber seal
Patent
1989-06-14
1991-06-25
Morgenstern, Norman
Coating apparatus
Gas or vapor deposition
Chamber seal
118719, 118726, 148DIG169, 156611, 156613, 156DIG103, 4272552, C23C 1600
Patent
active
050257510
ABSTRACT:
A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.
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Tsang, W. T., Applied Physics Letters, vol. 45, No. 11 (1984), pp. 1234-1236.
Hirayama, H. et al., "Gas Source Silicon Molecular Beam Epitaxy Using Silane", Applied Physics Letters, vol. 51, No. 26 (Dec. 28, 1987), pp. 2213-2215.
Panish, M. B., "Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P", Journal of the Electrochemical Society: Solid State Science and Technology (Dec. 1980), pp. 2709-2733.
Goto Shigeo
Hiruma Kenji
Kawata Masahiko
Takatani Shinichiro
Hitachi , Ltd.
Morgenstern Norman
Owens Terry J.
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