Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2004-03-10
2010-11-02
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C257SE21504
Reexamination Certificate
active
07824937
ABSTRACT:
A method for manufacturing a solid element device, which comprises providing a glass-containing Al2O3substrate (3) having a GaN based LED element (2) placed thereon, setting a P2O5—ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415° C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 109poise, and is adhered via an oxide formed on the surface of the glass-containing Al2O3substrate (3). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.
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Aida Kazuya
Hadame Kunihiro
Inoue Mitsuhiro
Kato Hideaki
Ohtsuka Masaaki
McGinn IP Law Group PLLC
Sumita Optical Glass Inc.
Taylor Earl N
Toyoda Gosei Co,., Ltd.
Vu David
LandOfFree
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