Solid element device and method for manufacturing the same

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C257SE21504

Reexamination Certificate

active

07824937

ABSTRACT:
A method for manufacturing a solid element device, which comprises providing a glass-containing Al2O3substrate (3) having a GaN based LED element (2) placed thereon, setting a P2O5—ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415° C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 109poise, and is adhered via an oxide formed on the surface of the glass-containing Al2O3substrate (3). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.

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